Display Substrate and Preparation Method Thereof, and Display Apparatus

ABSTRACT

Provided are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a first display region and a second display region within the first display region, wherein the first display region includes a plurality of emitting units, and the second display region includes a plurality of electrophoretic units, the plurality of emitting units are configured to realize display, and the plurality of electrophoretic units are configured to realize switch between a display state and a transparent state.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims the priority of Chinese PatentApplication No. 201910859632.6 filed to the CNIPA on Sep. 11, 2019, thecontent of which is hereby incorporated by reference.

TECHNICAL FIELD

The present disclosure relates to, but is not limited to the technicalfield of display, specifically to a display substrate and a preparationmethod thereof, and a display apparatus.

BACKGROUND

An Organic Light Emitting Diode (OLED) is an active light emittingdisplay device, which has advantages of ultra-thin thickness, largeviewing angle, high brightness, low cost, fast response speed, low powerconsumption, wide operating temperature range and flexible display. TheOLED has gradually become a next generation of display technology withgreat development prospects. OLEDs are increasingly applied in variousdisplay apparatuses, especially in intelligent terminal products such asmobile phones and tablet computers.

SUMMARY

The following is a summary of the subject matter described in detailherein. This summary is not intended to limit the scope of protection ofthe claims.

Provided is a display substrate, including a first display region and asecond display region within the first display region, wherein the firstdisplay region includes a plurality of emitting units, and the seconddisplay region includes a plurality of electrophoretic units, theplurality of emitting units are configured to realize display, and theplurality of electrophoretic units are configured to realize switchbetween a display state and a transparent state.

In some possible implementations, each of the plurality of emittingunits includes a first driving structure layer and an emitting structurelayer which are stacked on a substrate, and each of the plurality ofelectrophoretic units includes a second driving structure layer and anelectrophoretic structure layer which are stacked on the substrate.

In some possible implementations, the first driving structure layerincludes a plurality of first thin film transistors, each of theplurality of first thin film transistors includes a first active layer,a first gate electrode, a first source electrode and a first drainelectrode; the second driving structure layer includes a plurality ofsecond thin film transistors, each of the plurality of second thin filmtransistors includes a second active layer, a second gate electrode, asecond source electrode, and a second drain electrode; the first activelayer and the second active layer are arranged on a same layer; thefirst gate electrode and the second gate electrode are arranged on asame layer; and the first source electrode, the first drain electrode,the second source electrode and the second drain electrode are arrangedon a same layer.

In some possible implementations, the emitting structure layer includesa first anode, an organic emitting layer, and a first cathode; theelectrophoretic structure layer includes a second anode, anelectrophoretic display layer and a second cathode; the first anode andthe second anode are arranged on a same layer; and the first cathode andthe second cathode are arranged on a same layer.

In some possible implementations, the organic emitting layer includes afirst pixel define layer provided with an opening region, and an organicemitting material layer arranged within the opening region; and theelectrophoretic display layer includes a second pixel define layerprovided with a groove, and an electrophoretic display material layerarranged within the groove.

In some possible implementations, the electrophoretic display materiallayer includes a transparent dispersion and dyed conductive particlesarranged in the dispersion.

In some possible implementations, the first pixel define layer and thesecond pixel define layer are arranged on a same layer.

In some possible implementations, a cross-sectional shape of the grooveis an inverted trapezoid shape, and a width of a near end of the grooveclose to the second anode is smaller than a width of a remote end of thegroove away from the second anode.

In some possible implementations, a depth of the groove is less than orequal to a thickness of the second pixel define layer.

Provided is a display apparatus including the display substrateabovementioned.

Provided is a preparation method of a display substrate. The displaysubstrate includes a first display region and a second display regionwithin the first display region, and the preparation method includes:forming a plurality of emitting units in the first display region, andforming a plurality of electrophoretic units in the second displayregion, wherein the plurality of emitting units are configured torealize display, and the plurality of electrophoretic units areconfigured to realize switch between a display state and a transparentstate.

In some possible implementations, forming the plurality of emittingunits in the first display region and forming the plurality ofelectrophoretic units in the second display region includes: formingsynchronously first driving structure layers and second drivingstructure layers on a substrate; and forming synchronously emittingstructure layers and electrophoretic structure layers; wherein eachemitting structure layer is formed on each first driving structurelayer, and the each first driving structure layer and the each emittingstructure layer form an emitting unit realizing display; and eachelectrophoretic structure layer is formed on each second drivingstructure layer, and the each second driving structure layer and theeach electrophoretic structure layer form an electrophoretic unitrealizing switching between the display state and the transparent state.

In some possible implementations, forming synchronously the firstdriving structure layers and the second driving structure layers on thesubstrate includes: forming first active layers and second active layerson the substrate, wherein the first active layers are in the firstdisplay region and the second active layers are in the second displayregion; forming a first insulating layer, and forming first gateelectrodes and second gate electrodes on the first insulating layer,wherein the first gate electrodes are in the first display region andthe second gate electrodes are in the second display region; forming asecond insulating layer and a third insulating layer, wherein first viasexposing each first active layer and each second active layerrespectively and second vias exposing each first gate electrode and eachsecond gate electrode respectively are formed on the third insulatinglayer; forming first source electrodes, first drain electrodes, firstconnection electrodes, second source electrodes, second drain electrodesand second connection electrodes on the third insulating layer, whereineach first source electrode and each first drain electrode arerespectively connected with a first active layer through first vias,each first connection electrode is connected with a first gate electrodethrough a second via, each second source electrode and each second drainelectrode are respectively connected with a second active layer throughfirst vias, and each second connection electrode is connected with eachsecond gate electrode through a second via; and forming a fourthinsulating layer, wherein third vias exposing the first drain electrodesand the second drain electrodes respectively are formed on the fourthinsulating layer.

In some possible implementations, forming synchronously the emittingstructure layers and the electrophoretic structure layers includes:forming first anodes and second anodes on the fourth insulating layer,wherein each first anode and each second anode are respectivelyconnected with a first drain electrode and a second drain electrodethrough third vias; forming organic emitting layers in the first displayregion, and forming electrophoretic display layers in the second displayregion; and forming first cathodes and second cathodes, wherein thefirst cathodes are in the first display region and the second cathodesare in the second display region.

In some possible implementations, forming the organic emitting layers inthe first display region, and forming the electrophoretic display layersin the second display region includes: forming first pixel define layersand second pixel define layers, wherein the first pixel define layersare in the first display region, opening regions exposing the firstanodes are formed on the first pixel define layers, the second pixeldefine layers are in the second display region, and grooves are formedon the second pixel define layers; and forming organic emitting materiallayers within the opening regions, and forming the electrophoreticdisplay material layers within the grooves.

In some possible implementations, a depth of each groove is less than orequal to a thickness of each second pixel define layer.

In some possible implementations, a cross-sectional shape of each grooveis an inverted trapezoid shape, and a width of a near end of the grooveclose to a second anode is smaller than a width of a remote end of thegroove away from the second anode; and each electrophoretic displaymaterial layer includes a transparent dispersion and dyed conductiveparticles arranged in the dispersion.

In some possible implementations, forming the organic emitting layers inthe first display region, and forming the electrophoretic display layersin the second display region includes: forming first pixel define layersin the first display region, wherein opening regions exposing the firstanodes are formed on the first pixel define layers; forming organicemitting material layers are formed in the opening regions; and pastingpre-prepared electrophoretic display layers on the second displayregion, wherein the electrophoretic display layers include second pixeldefine layers formed with grooves, and electrophoretic display materiallayers arranged within the grooves.

In some possible implementations, a depth of each groove is less than orequal to a thickness of each second pixel define layer.

In some possible implementations, a cross-sectional shape of each grooveis an inverted trapezoid shape, and a width of a near end of the grooveclose to a second anode is smaller than a width of a remote end of thegroove away from the second anode; and each electrophoretic displaymaterial layer includes a transparent dispersion and dyed conductiveparticles arranged in the dispersion, and colors of dyed conductiveparticles include white, black, red, green or blue.

Other aspects will become apparent upon reading and understanding thedrawings and detailed description.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings are used to provide a further understanding ofthe technical solutions of the present disclosure and form a part of thespecification. Together with the embodiments of the present disclosure,they are used to explain the technical solutions of the presentdisclosure and do not constitute a limitation on the technical solutionsof the present disclosure. The shapes and dimensions of the componentsin the drawings do not reflect real proportions, and are only for thepurpose of schematically illustrating the present disclosure.

FIG. 1 is a schematic structural diagram of a display substrateaccording to an exemplary embodiment of the present disclosure.

FIG. 2 is a sectional view taken along an A-A direction in FIG. 1.

FIG. 3 is a schematic diagram of a display substrate after a pattern ofan active layer is formed according to an exemplary embodiment of thepresent disclosure.

FIG. 4 is a schematic diagram of a display substrate after a pattern ofa gate electrode is formed according to an exemplary embodiment of thepresent disclosure.

FIG. 5 is a schematic diagram of a display substrate after a pattern ofa capacitor electrode is formed according to an exemplary embodiment ofthe present disclosure.

FIG. 6 is a schematic diagram of a display substrate after a pattern ofa third insulating layer is formed according to an exemplary embodimentof the present disclosure.

FIG. 7 is a schematic diagram of a display substrate after patterns of asource electrode and a drain electrode are formed according to anexemplary embodiment of the present disclosure.

FIG. 8 is a schematic diagram of a display substrate after a pattern ofa fourth insulating layer is formed according to an exemplary embodimentof the present disclosure.

FIG. 9 is a schematic diagram of a display substrate after a pattern ofan anode is formed according to an exemplary embodiment of the presentdisclosure.

FIG. 10 is a schematic diagram of a display substrate after a pattern ofa pixel define layer is formed according to an exemplary embodiment ofthe present disclosure.

FIG. 11 is a schematic diagram of a display substrate after a pattern ofan organic emitting material layer is formed according to an exemplaryembodiment of the present disclosure.

FIG. 12 is a schematic diagram of a display substrate after a pattern ofan electrophoretic display material layer is formed according to anexemplary embodiment of the present disclosure.

FIG. 13 is a schematic diagram of a display substrate after a pattern ofa cathode is formed according to an exemplary embodiment of the presentdisclosure.

FIG. 14 is a schematic diagram of a display substrate after a pattern ofan encapsulation layer is formed according to an exemplary embodiment ofthe present disclosure.

FIG. 15 is a schematic diagram of an electrophoretic unit in a displaystate according to an exemplary embodiment of the present disclosure.

FIG. 16 is a schematic diagram of an electrophoretic unit in atransparent state according to an exemplary embodiment of the presentdisclosure.

FIG. 17 is a schematic diagram of a display substrate after a pattern ofa first pixel define layer is formed according to an exemplaryembodiment of the present disclosure.

FIG. 18 is a schematic diagram of a display substrate after a pattern ofan organic emitting material layer is formed according to an exemplaryembodiment of the present disclosure.

FIG. 19 is a schematic diagram of a display substrate after anelectrophoretic display layer is pasted according to an exemplaryembodiment of the present disclosure.

Reference signs in the drawings are explained below.

-   -   10—Substrate;    -   11—Buffer layer;    -   12—First insulating layer;    -   13—Second insulating layer;    -   14—Third insulating layer;    -   15—Fourth insulating layer;    -   16—First inorganic layer;    -   17—Organic layer;    -   18—Second inorganic layer;    -   102—First active layer;    -   103—First gate electrode;    -   104—First capacitor electrode;    -   105—First source electrode;    -   106—First drain electrode;    -   107—First connection electrode;    -   202—Second active layer;    -   203—Second gate electrode;    -   204—Second capacitor electrode;    -   205—Second source electrode;    -   206—Second drain electrode;    -   207—Second connection electrode;    -   301—First anode;    -   302—First pixel define layer;    -   303—Organic emitting material layer;    -   304—First cathode;    -   401—Second anode;    -   402—Second pixel define layer;    -   403—Electrophoretic display material layer;    -   404—Second cathode;    -   500—Dyed conductive particles.

DETAILED DESCRIPTION

The embodiments herein may be implemented in a number of differentforms. A person of ordinary skills in the art will readily understandthe fact that implementations and contents may be transformed into avariety of forms without departing from the spirit and scope of thepresent disclosure. Therefore, the present disclosure should not beconstrued as being limited only to what is described in the followingembodiments. The embodiments in the present disclosure and the featuresin the embodiments may be combined with each other arbitrarily if thereis no conflict.

For intelligent terminal products, most manufacturers are pursuing ahigher screen-to-body ratio, such as a full screen and a borderlessscreen, so as to bring more dazzling visual impact to users. Forproducts such as intelligent terminals, it is necessary to arrangefront-mounted cameras, optical sensors and other hardware. In order toincrease the screen-to-body ratio, one technology is to open a hole onthe screen and hide the hardware, such as the front-mounted camera,under the OLED screen. Although such manner of opening can realize alarger display region, in order to ensure a shooting function of thecamera, the opening region has to ensure a higher transmittance, so thepixels in the opening region cannot display images, and the truly fullscreen display is not realized. Such manner of opening also increasesdesign difficulty and manufacturing cost, and cannot ensureeffectiveness and reliability of encapsulation.

Electrophoretic Display (EPD for short) is a new display technologybased on the electrophoresis principle. It uses the principle ofmovement of conductive particles in an electric field, controls themovement of conductive particles through the electric field, thusrealizing image display. There are three manners to realize threeelectrophoretic display, i.e., direct driving, passive matrix drivingand active matrix driving. Compared with the direct driving and thepassive matrix driving, active matrix driving technology can achievebetter control, good information display, and has better advantages inhigh resolution and color display and the like. Display of high-endelectronic paper mostly uses the active matrix driving technology. ThinFilm Transistor (TFT) technology is a common active matrix drivingtechnology. In an active driving matrix electrophoretic display panel,TFTs are integrated on a substrate to form a driver substrate, colloidalelectrophoretic liquid is arranged on an electrophoretic substrate, theelectrophoretic substrate and the driver substrate are combined to forma display panel. Electric signals of electrodes are controlled by theTFTs, so that charged particles in the colloidal electrophoretic liquidare shifted/gathered on a display surface, and images are formed byreflecting or absorbing external light. Since the electrophoreticdisplay is bistable and does not need a backlight source, the imagedisplay can be maintained after the power supply is turned off, theelectrophoretic display has characteristics of low power consumption,high contrast, good sunlight readability and the like.

The present disclosure provides a solution of display by integratingOLED and EPD, which can realize full screen display. In an exemplaryembodiment, a display substrate includes a first display region and asecond display region within the first display region, wherein the firstdisplay region includes a plurality of emitting units configured torealize display, and the second display region includes a plurality ofelectrophoretic units configured to realize switch between a displaystate and a transparent state.

According to the present disclosure, organic emitting display andelectrophoretic display are well integrated, and a characteristic thatthe electrophoretic units can be switched between a display state and atransparent state is utilized, so that a full screen is realized, andthe normal work of hardware such as a camera can be ensured. When theelectrophoretic units are switched to the display state, theelectrophoretic units and the emitting units provide image displaytogether, further improving the screen-to-body ratio and realizing atruly full screen. When the electrophoretic units are switched to thetransparent state, a transparent region formed by the electrophoreticunits can provide a working window for hardware such as a camera andensure the normal work of the hardware such as the camera.

In an exemplary embodiment, the display substrate further includes aplurality of gate lines and a plurality of data lines, wherein theplurality of gate lines and the plurality of data lines verticallyintersect to define a plurality of display units arranged in a matrix.In the first display region, the display units are emitting units; inthe second display region, the display units are electrophoretic units.The emitting units and the electrophoretic units in the same row sharethe same gate line; and the emitting units and the electrophoretic unitsin the same column share the same data line.

In an exemplary embodiment, an emitting unit includes a first drivingstructure layer and an emitting structure layer which are stacked on asubstrate, and an electrophoretic unit includes a second drivingstructure layer and an electrophoretic structure layer which are stackedon the substrate, the first driving structure layer and the seconddriving structure layer are formed synchronously, and the emittingstructure layer and the electrophoretic structure layer are formedsynchronously.

In an exemplary embodiment, the first driving structure layer includes aplurality of first thin film transistors, each of the plurality of firstthin film transistors includes a first active layer, a first gateelectrode, a first source electrode and a first drain electrode; thesecond driving structure layer includes a plurality of second thin filmtransistors, each of the plurality of second thin film transistorsincludes a second active layer, a second gate electrode, a second sourceelectrode, and a second drain electrode. The first active layer and thesecond active layer are arranged on the same layer and formed throughthe same patterning process; the first gate electrode and the secondgate electrode are arranged on the same layer and are formed through thesame patterning process; the first source electrode and the first drainelectrode are arranged on the same layer as the second source electrodeand the second drain electrode, and are formed through the samepatterning process as the second source electrode and the second drainelectrode.

In an exemplary embodiment, the emitting structure layer includes afirst anode, an organic emitting layer, and a first cathode; theelectrophoretic structure layer includes a second anode, anelectrophoretic display layer and a second cathode; the first anode andthe second anode are arranged on the same layer and are formed throughthe same patterning process; and the first cathode and the secondcathode are arranged on the same layer and formed through the samepatterning process.

In an exemplary embodiment, the organic emitting layer includes a firstpixel define layer provided with an opening region exposing the firstanode, and an organic emitting material layer arranged within theopening region; and the electrophoretic display layer includes a secondpixel define layer provided with a groove, and an electrophoreticdisplay material layer arranged within the groove.

In an exemplary embodiment, a shape of the groove is a frustum of a coneor frustum of a prism with a small lower base and a large upper base. Ona plane perpendicular to the substrate, the cross-sectional shape of thegroove is an inverted trapezoid shape, and a width of a near end of theinverted trapezoid close to the second anode (a lower base of theinverted trapezoid) is smaller than a width of a remote end of theinverted trapezoid away from the second anode (an upper base of theinverted trapezoid).

In an exemplary embodiment, a depth of the groove is equal to athickness of the second pixel define layer, and the groove exposes asecond anode. Alternatively, the depth of the groove is smaller than thethickness of the second pixel define layer, and the groove does notexpose the second anode.

In an exemplary embodiment, the electrophoretic display material layerincludes a transparent dispersion and dyed conductive particles arrangedin the dispersion. Under action of an electric field formed by thesecond anode and the second cathode, when the dyed conductive particlesmove towards a side of the second cathode, the electrophoretic unit isin the display state, and when the dyed conductive particles movetowards a side of the second anode, the electrophoretic unit is in thetransparent state.

In an exemplary embodiment, colors of the dyed conductive particlesinclude any one or more of white, black, red, green, and blue.

FIG. 1 is a schematic diagram of structure of a display substrateaccording to an exemplary embodiment of the present disclosure, and FIG.2 is a sectional view taken along an A-A direction in FIG. 1, andillustrates a display substrate with a top emission structure. As shownin FIG. 1, in an exemplary embodiment, on a plane parallel to thedisplay substrate, the display substrate includes a first display region100 and a second display region 200 within the first display region 100,the first display region 100 includes a plurality of emitting unitsdistributed in an array, the plurality of emitting units are configuredto realize display, the second display region includes a plurality ofelectrophoretic units distributed in an array, and the plurality ofelectrophoretic units are configured to realize switch between a displaystate and a transparent state. In an exemplary embodiment, a position ofthe second display region 200 within the first display region 100 is notlimited, and may be located at an upper or lower portion of the firstdisplay region 100, or may be located at an edge of the first displayregion 100. In an exemplary embodiment, a shape of the second displayregion 200 is not limited, and may be circular as shown in FIG. 1, ormay be oval, square, diamond, or any of other polygons.

In an exemplary embodiment, on a plane perpendicular to the displaysubstrate, each emitting unit may include a first driving structurelayer and an emitting structure layer, which are arranged on thesubstrate 10. The first driving structure layer may include a pluralityof first thin film transistors T1, which may be 2T1C, 3T1C, or 4T1Cdesign. FIG. 2 illustrates an example of only one emitting unit and onefirst thin film transistor. Each electrophoretic unit may include asecond driving structure layer and an electrophoretic structure layer,which are arranged on the substrate 10. The second driving structurelayer may include a plurality of second thin film transistors T2, whichmay be 2T1C design. FIG. 2 illustrates an example of only one displayunit and one second thin film transistor. The first driving structurelayer in the first display region 100 and the second driving structurelayer in the second display region 200 may be synchronously prepared andformed, and the first thin film transistors T1 of the first drivingstructure layer and the second thin film transistors T2 of the seconddriving structure layer may share gate lines and data lines to realizeprogressive scanning to write display data.

In an exemplary embodiment, the first driving structure layer in thefirst display region 100 may include a first thin film transistor T1arranged on the substrate 10, and the emitting structure layer mayinclude a first anode 301 connected with a first drain electrode 106 ofthe first thin film transistor T1, and a first pixel define layer 302,an organic emitting material layer 303, and a first cathode 304. Thesecond driving structure layer in the second display region 200 mayinclude a second thin film transistor T2 arranged on the substrate 10,and the electrophoretic structure layer may include a second anode 401connected with a second drain electrode 206 of the second thin filmtransistor T2, and a second pixel define layer 402, an electrophoreticdisplay material layer 403, and a second cathode 404. In an exemplaryembodiment, a structure of the second thin film transistor T2 and astructure of the first thin film transistor T1 may be the same, and maybe synchronously prepared by the same process; the second anode 401 andthe first anode 301 may be arranged on the same layer and may be formedby the same patterning process; the second pixel define layer 402 andthe first pixel define layer 302 may be arranged on the same layer andmay be formed by the same patterning process; the second cathode 404 andthe first cathode 304 may be arranged on the same layer and may beformed by the same patterning process; and the second cathode 404 andthe first cathode 304 may be an integral structure.

In an exemplary embodiment, the second pixel define layer 402 isprovided with a groove, and the groove may have a shape of a frustum ofa cone or frustum of a prism with a large upper base and a small lowerbase on a plane parallel to the substrate. On a plane perpendicular tothe substrate, the cross-sectional shape of the groove is an invertedtrapezoid shape, and a width of a near end (a lower base of the invertedtrapezoid) close to the second anode 401 is smaller than a width of aremote end (an upper base of the inverted trapezoid) away from thesecond anode 401. The electrophoretic display material layer 403 isarranged within the groove, and includes a transparent dispersion anddyed conductive particles arranged in the transparent dispersion. Underaction of an electric field formed by the second anode 401 and thesecond cathode 404, the dyed conductive particles not only may move to aside of the second cathode 404 to enable the electrophoretic unit todisplay images, but also may move to a side of second anode 401 toenable the electrophoretic unit to form local transparency, therebyenabling the electrophoretic unit to be switched between the displaystate and the transparent state.

The following is an exemplary explanation through a preparation processof the display substrate. The “patterning process” mentioned in thepresent disclosure includes processinges, such as film layer deposition,coating of photoresist, mask exposure, development, etching, andstripping of photoresist. Deposition may be implemented by any one ormore of sputtering, evaporation and chemical vapor deposition, coatingmay be implemented by any one or more of spraying and spin coating, andetching may be implemented by any one or more of dry etching and wetetching, and the present disclosure is not limited thereto. “Thin film”refers to a layer of thin film fabricated by a certain material on abase substrate using deposition or another process. If the “thin film”does not need a patterning process throughout the fabrication process,the “thin film” may also be referred to as a “layer”. If the “thin film”needs a patterning process throughout the fabrication process, it isreferred to as a “thin film” before the patterning process and as a“layer” after the patterning process. The “layer” that has undergone apatterning process includes at least one “pattern”.

In an exemplary embodiment, the preparation process of the displaysubstrate includes the following operations.

(1) Forming a Pattern of an Active Layer on a Substrate

In an exemplary embodiment, forming the pattern of the active layer onthe substrate may include the following acts: a buffer thin film isfirst deposited on the substrate 10 to form a pattern of a buffer layer11 covering the entire substrate 10; subsequently, an active layer thinfilm is deposited, and the active layer thin film is patterned by apatterning process to form patterns of a first active layer 102 and asecond active layer 202 arranged on the buffer layer 11, the firstactive layer 102 is formed in a first display region and the secondactive layer 202 is formed in a second display region, as shown in FIG.3. In an exemplary embodiment, the substrate may be a flexible substratemade of a material such as polyimide (PI), polyethylene terephthalate(PET), or a surface-treated polymer soft film. The buffer thin film maybe made of silicon nitride (SiNx), silicon oxide (SiOx), siliconoxynitride (SiON), or the like, and may be a single layer, a pluralityof layers, or a composite layer. The active layer thin film may be madeof various materials such as amorphous indium gallium zinc Oxide(a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO),amorphous silicon (a-Si), polysilicon (p-Si), sexithiophene,polythiophene, that is, the present disclosure is simultaneouslyapplicable to a Top Gate TFT-based display substrate manufacturedthrough an oxide technology, a silicon technology and an organictechnology.

(2) Forming a Pattern of a Gate Electrode

In an exemplary embodiment, forming the pattern of the gate electrodemay include the following acts: a first insulating thin film and a firstmetal thin film are sequentially deposited on the substrate 10 where theabove structure is formed, the first metal thin film is patterned by apatterning process to form a first insulating layer 12 covering thebuffer layer 11, the first active layer 102 and the second active layer202, and patterns of a first gate electrode 103, a second gate electrode203 and a gate line (not shown) arranged on the first insulating layer12, the first gate electrode 103 is formed in the first display region,and the second gate electrode 203 is formed in the second displayregion, and both the first gate electrode 103 and the second gateelectrode 203 are connected with the gate line, as shown in FIG. 4. Inan exemplary embodiment, the first insulating thin film may be made ofsilicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON),or the like, and may be a single layer, a plurality of layers, or acomposite layer. In an exemplary embodiment, the first insulating layer12 is referred to as a gate insulating (GI) layer. The first metal thinfilm may be made of a metal material, such as argentum (Ag), copper(Cu), aluminum (Al), molybdenum (Mo), or an alloy material of the abovemetals, such as aluminum neodymium alloy (AlNd), molybdenum niobiumalloy (MoNb), or may be a multi-layer metal structure, such asmolybdenum (Mo)/copper (Cu)/molybdenum (Mo), or may be a stackedstructure formed by a metal and a transparent conductive material, suchas indium tin oxide (ITO)/argentum (Ag)/indium tin oxide (ITO).

(3) Forming a Pattern of a Capacitor Electrode

In an exemplary embodiment, forming the pattern of the capacitorelectrode may include the following acts: a second insulating thin filmand a second metal thin film are sequentially deposited on the substrate10 where the above structure is formed, the second metal thin film ispatterned by a patterning process to form a second insulating layer 13covering the first insulating layer 12, the first gate electrode 103,the second gate electrode 203, and the gate line, and patterns of afirst capacitor electrode 104 and a second capacitor electrode 204arranged on the second insulating layer 13, the first capacitorelectrode 104 is formed in the first display region, a position of thefirst capacitor electrode 104 corresponds to a position of the firstgate electrode 103, the second capacitor electrode 204 is formed in thesecond display region, a position of the second capacitor electrode 204corresponds to a position of the second gate electrode 203, and middleregions of the first capacitor electrode 104 and the second capacitorelectrode 204 are etched away, as shown in FIG. 5. In an exemplaryembodiment, the second insulating thin film may be made of siliconnitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or thelike, and may be a single layer, a plurality of layers, or a compositelayer. In an exemplary embodiment, the second insulating layer 13 isreferred to as a gate insulating (GI) layer. The second metal thin filmmay be made of a metal material, such as argentum (Ag), copper (Cu),aluminum (Al), molybdenum (Mo), or an alloy material of the abovemetals, such as aluminum neodymium alloy (AlNd), molybdenum niobiumalloy (MoNb), or may be a multi-layer metal structure, such asmolybdenum (Mo)/copper (Cu)/molybdenum (Mo), or may be a stackedstructure formed by a metal and a transparent conductive material, suchas indium tin oxide (ITO)/argentum (Ag)/indium tin oxide (ITO).

(4) Forming a Pattern of a Third Insulating Layer

In an exemplary embodiment, forming the pattern of the third insulatinglayer may include the following acts: a third insulating thin film isdeposited on the substrate 10 where the above structure is formed, thethird insulating thin film is patterned through a patterning process toform a pattern of a third insulating layer 14 with first vias K1 andsecond vias K2 in the first and second display regions, respectively,two first vias K1 provided in each display region are respectively atboth ends of the active layer of each display region, the thirdinsulating layer 14, the second insulating layer 13 and the firstinsulating layer 12 are etched away in the first vias K1 to exposesurfaces of the first active layer 102 and the second active layer 202;one second via K2 provided in each display region is in a middle regionof the capacitor electrode in each display region, the third insulatinglayer 14 and the second insulating layer 13 are etched away in thesecond vias K2 to expose surfaces of the first gate electrode 103 andthe second gate electrode 203, as shown in FIG. 6. In an exemplaryembodiment, the third insulating thin film may be made of siliconnitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or thelike, and may be a single layer, a plurality of layers, or a compositelayer. In an exemplary embodiment, the third insulating layer 14 isreferred to as an interlayer insulating (ILD) layer.

(5) Forming Patterns of a Source Electrode and a Drain Electrode

In an exemplary embodiment, forming patterns of the source electrode andthe drain electrode may include the following acts: a third metal thinfilm is deposited on the substrate 10 where the above structure isformed, the third metal thin film is patterned by a patterning processto form patterns of a first source electrode 105, a first drainelectrode 106, and a first connection electrode 107 in the first displayregion, and form patterns of a second source electrode 205, a seconddrain electrode 206, and a second connection electrode 207 in the seconddisplay region, and form a pattern of a data line (not shown) in theentire display region, wherein the first source electrode 105 and thefirst drain electrode 106 are respectively connected with both ends ofthe first active layer 102 through two first vias K1, the firstconnection electrode 107 is connected with the first gate electrode 103through a second via K2, and the first source electrode 105 is furtherconnected with the data line; the second source electrode 205 and thesecond drain electrode 206 are respectively connected with both ends ofthe second active layer 202 through two first vias K1, the secondconnection electrode 207 is connected with the second gate electrode 203through a second via K2, and the second source electrode 205 is furtherconnected with a data line, as shown in FIG. 7. In an exemplaryembodiment, the third metal thin film may be made of a metal material,such as argentum (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), oran alloy material of the above metals, such as aluminum neodymium alloy(AlNd), molybdenum niobium alloy (MoNb), or may be a multi-layer metalstructure, such as molybdenum (Mo)/copper (Cu)/molybdenum (Mo), or maybe a stacked structure formed by a metal and a transparent conductivematerial, such as indium tin oxide (ITO)/argentum (Ag)/indium tin oxide(ITO).

(6) Forming a Pattern of a Fourth Insulating Layer

In an exemplary embodiment, forming the pattern of the fourth insulatinglayer may include the following acts: a fourth insulating thin film iscoated on the substrate where the above pattern is formed, the patternof the fourth insulating layer 15 covering the above structure is formedin the display region through photolithography processes of maskexposure and development, wherein the fourth insulating layer 15 isprovided with a third via K3 in each of the first display region and thesecond display region, and the third vias K3 expose the first drainelectrode 106 and the second drain electrode 206, respectively, as shownin FIG. 8. In an exemplary embodiment, a material of the fourthinsulating thin film includes, but is not limited to, polysiloxane-basedmaterials, acrylic-based materials, polyimide-based materials, or thelike. In an exemplary embodiment, the fourth insulating layer 15 isreferred to as a planarization layer (PNL).

Through the preparation processes of the acts (1) to (6), thesynchronous preparation of the first driving structure layer in thefirst display region and the second driving structure layer in thesecond display region on the substrate 10 is completed. In an exemplaryembodiment, the first thin film transistor T1 of the first drivingstructure layer in the first display region includes the first activelayer 102, the first gate electrode 103, the first capacitor electrode104, the first source electrode 105, the first drain electrode 106, andthe first connection electrode 107. The second thin film transistor T2of the second driving structure layer in the second display regionincludes the second active layer 202, the second gate electrode 203, thesecond capacitor electrode 204, the second source electrode 205, thesecond drain electrode 206, and the second connection electrode 207. Thefirst thin film transistor T1 and the second thin film transistor T2have the same structure and are formed synchronously through apreparation process. That is, the first active layer 102 and the secondactive layer 202 are arranged on the same layer, and are formedsimultaneously through the same patterning process; the first gateelectrode 103 and the second gate electrode 203 are arranged on the samelayer, and are formed simultaneously through the same patterningprocess; the first capacitor electrode 104 and the second capacitorelectrode 204 are arranged on the same layer, and are formedsimultaneously through the same patterning process; the first sourceelectrode 105, the first drain electrode 106, and the first connectionelectrode 107 are arranged on the same layer as the second sourceelectrode 205, the second drain electrode 206, and the second connectionelectrode 207, and are simultaneously formed by the same patterningprocess as the second source electrode 205, the second drain electrode206, and the second connection electrode 207. In an exemplaryembodiment, a plurality of gate lines and a plurality of data lines maybe further formed in the first display region and the second displayregion, and the plurality of gate lines and the plurality of data linesvertically intersect to define a plurality of display units. In thefirst display region, the display units are emitting units. In thesecond display region, the display units are electrophoretic units. Theemitting units and the electrophoretic units in the same row share thesame gate line, and the emitting units and the electrophoretic units inthe same column share the same data line.

(7) Forming a Pattern of an Anode

In an exemplary embodiment, forming the pattern of the anode may includethe following acts: a transparent conductive thin film is deposited on asubstrate where the above pattern is formed, the transparent conductivethin film is patterned through a patterning process to form patterns ofa first anode 301 and a second anode 401, wherein the first anode 301 isin the first display region, and is connected with the first drainelectrode 106 through a third via K3 of the first display region, thesecond anode 401 is in the second display region, and is connected withthe second drain electrode 206 through a third via K3 of the seconddisplay region, as shown in FIG. 9. In an exemplary embodiment, thetransparent conductive thin film may be made of indium tin oxide (ITO)or indium zinc oxide (IZO).

(8) Forming a Pattern of a Pixel Define Layer

In an exemplary embodiment, forming the pattern of the pixel definelayer may include the following acts: a pixel definition thin film iscoated on a substrate where the above pattern is formed, and patterns ofa first pixel define layer 302 and a second pixel define layer 402 areformed through mask exposure and development, wherein the first pixeldefine layer 302 is in the first display region and defines an openingregion KA1 exposing the first anode 301, and the second pixel definelayer 402 is in the second display region and is provided with a grooveKA2, as shown in FIG. 10. In an exemplary embodiment, a structure andshape of the opening region KA1 of the first pixel define layer 302 maybe the same as those of an existing OLED, a cross-sectional shape of thegroove KA2 of the second pixel define layer 402 is an inverted trapezoidshape, and a width of a near end of the groove KA2 close to the secondanode 401 is smaller than a width of a remote end of the groove KA2 awayfrom the second anode 401. In an exemplary embodiment, a depth of thegroove KA2 may be equal to a thickness of the second pixel define layer402, i.e., a bottom of the groove KA2 exposes a surface of the secondanode. In some possible implementations, the depth of the groove KA2 maybe smaller than the thickness of the second pixel define layer 402, thatis, the groove KA2 does not penetrate the second pixel define layer 402,the groove KA2 does not expose the surface of the second anode, and thebottom of the groove KA2 is spaced apart from the second anode by asecond pixel define layer with a certain thickness. In an exemplaryembodiment, the pixel definition thin film may be made of a transparentorganic material. In some possible implementations, the first pixeldefine layer 302 and the second pixel define layer 402 may be formedseparately, a material of the first pixel define layer 302 is a materialcommonly used for the OLED, and a material of the second pixel definelayer 402 is a transparent resin material. In an exemplary embodiment,the second pixel define layer 402 is referred to as a Partition Wall.Although not shown in the drawings, the first pixel define layers 302and the second pixel define layers 402 are arranged in a matrix on thesubstrate 10, an opening region is formed in each emitting unit, and agroove is formed in each electrophoretic unit.

(9) Forming a Pattern of an Organic Emitting Material Layer

In an exemplary embodiment, forming the pattern of the organic emittingmaterial layer may include the following acts: the pattern of theorganic emitting material layer 303 is formed by evaporation or ink-jetprinting in each opening region KA1 formed in the first display regionon the substrate where the above pattern is formed, wherein the organicemitting material layer 303 is connected with the first anode 301, asshown in FIG. 11. In an exemplary embodiment, the organic emittingmaterial layer 303 may include an emitting material layer (EML). In somepossible implementations, the organic emitting material layer mayinclude a hole injection layer, a hole transporting layer, an emittingmaterial layer, an electron transporting layer, and an electroninjection layer arranged sequentially, which may improve the efficiencyof injecting electrons and holes into the emitting layer.

(10) Forming a Pattern of an Electrophoretic Display Material Layer

In an exemplary embodiment, forming the pattern of the electrophoreticdisplay material layer may include the following acts: electrophoreticliquid is injected, by ink-jet printing, into each groove KA2 formed inthe second display region on the substrate, where the above pattern isformed, to form the pattern of the electrophoretic display materiallayer 403, as shown in FIG. 12. In an exemplary embodiment, theelectrophoretic display material layer 403 may include a transparentdispersion, dyed conductive particles, and a transparent sealing layer.

(11) Forming a Pattern of a Cathode

In an exemplary embodiment, forming the pattern of the cathode mayinclude the following acts: patterns of a first cathode 304 and a secondcathode 404 are formed, by evaporation, on the substrate where theaforementioned pattern is formed. The first cathode 304 is in the firstdisplay region, and is connected with the organic emitting materiallayer 303. The second cathode 404 is in the second display region, andis connected with the electrophoretic display material layer 403, asshown in FIG. 13. In an exemplary embodiment, the first cathode 304 andthe second cathode 404 may be in an integral structure. In some possibleimplementations, the first cathode 304 and the second cathode 404 may beseparate structures, and the first cathode 304 and the second cathode404 may provide different voltages. In an exemplary embodiment, thematerials of the first cathode 304 and the second cathode 404 may be oneof metal materials such as magnesium (Mg), argentum (Ag), aluminum (Al),copper (Cu), lithium (Li), or an alloy of the above metals.

(12) Forming a Pattern of an Encapsulation Layer

In an exemplary embodiment, forming the pattern of the encapsulationlayer may include the following acts: a first inorganic thin film isfirst deposited on the substrate where the above pattern is formed, andthe first inorganic thin film covers the first display region and thesecond display region to form a pattern of a first inorganic layer 16.Next, an organic layer 17 is formed in the first display region byink-jet printing. Subsequently, a second inorganic thin film isdeposited, and the second inorganic thin film covers the first displayregion and the second display region to form a pattern of a secondinorganic layer 18, as shown in FIG. 14. In an exemplary embodiment, theencapsulation layer may have an inorganic/organic/inorganic three-layerstructure, an intermediate organic layer is formed only in the firstdisplay region, and the upper and lower inorganic layers cover the firstdisplay region and the second display region, to complete encapsulationof the display substrate.

Through the preparation processes of the acts (7) to (12), thepreparation of the emitting structure layer in the first display regionand the electrophoretic structure layer in the second display region iscompleted. In an exemplary embodiment, the emitting structure layer inthe first display region includes the first anode 301, the first pixeldefine layer 302, the organic emitting material layer 303, the firstcathode 304, and the encapsulation layer. The first anode 301 isconnected with the drain electrode of the first transistor T1, theorganic emitting material layer 303 is arranged between the first anode301 and the first cathode 304, and the first cathode 304 and the secondcathode 404 of the second display region are integrated. Theelectrophoretic structure layer in the second display region includesthe second anode 401, the second pixel define layer 402, theelectrophoretic display material layer 403, the second cathode 404, andthe encapsulation layer. The second anode 401 is connected with thedrain electrode of the second transistor T2, the electrophoretic displaymaterial layer 403 is arranged between the second anode 401 and thesecond cathode 404, and the second cathode 404 and the first cathode 304of the first display region are integrated. The emitting structure layerand the electrophoretic structure layer are formed synchronously througha preparation process, namely, the first anode 301 and the second anode401 are arranged on the same layer and formed simultaneously through thesame patterning process. The first pixel define layer 302 and the secondpixel define layer 402 are arranged on the same layer and formedsimultaneously through the same patterning process, and the firstcathode 304 and the second cathode 404 are arranged on the same layerand formed simultaneously through the same patterning process.

FIG. 15 is a schematic diagram of an electrophoretic unit in a displaystate according to an exemplary embodiment of the present disclosure,and FIG. 16 is a schematic diagram of an electrophoretic unit in atransparent state according to an exemplary embodiment of the presentdisclosure. When the electrophoretic unit is in the display state, agate line turn-on signal enables the second transistor T2 to be turnedon, and a data voltage of the data line is applied to the second anode401 through the second transistor T2. An electric field generatedbetween the second anode 401 and the second cathode 404 enables the dyedconductive particles 500 to move toward a side away from the secondanode 401, and the top of the groove is covered by the dyed conductiveparticles 500, enabling the electrophoretic unit to display images, asshown in FIG. 15. When the electrophoretic unit is in the transparentstate, a gate line turn-on signal enables the second transistor T2 to beturned on, and a data voltage of the data line is applied to the secondanode 401 through the second transistor T2. An electric field generatedbetween the second anode 401 and the second cathode 404 enables the dyedconductive particles 500 to move toward a side close to the second anode401 and to gather at the bottom of the groove, enabling theelectrophoretic unit to form local transparency, as shown in FIG. 16.

In the following, two states of the electrophoretic unit will beexemplified in an example where the dyed conductive particles are whiteparticles. In an exemplary embodiment, the dispersion is a transparentliquid, the sealing layer is a transparent material layer, the secondcathode 404 has a negative (−) potential, and the white particles have apositive (+) charge characteristic. In an exemplary embodiment, when apositive (+) voltage provided by the data line is applied to the secondanode 401 through the second transistor T2, since the second cathode 404has the negative (−) potential, the white particles with positive (+)charges move toward a side of the second cathode 404, and finally thetop of the groove with a shape of an inverted frustum of a cone or aninverted frustum of a prism is covered by the white particles. Most ofthe light incident from outside (an upper part) is reflected by whiteparticles, electrophoretic units display images, and a plurality ofelectrophoretic units form a weak display region. In an exemplaryembodiment, a density of the white particles on the top of the groovewith a shape of an inverted frustum of a cone or an inverted frustum ofa prism varies according to a voltage value applied to the second anode401, so intensity of the light reflected by the white particles alsovaries, and ideal brightness can be realized. In an exemplaryembodiment, when the negative (−) voltage provided by the data line islower than the negative (−) potential of the second cathode 404, thewhite particles with positive (+) charge move toward a side of thesecond anode 401, finally the white particles gather at the bottom ofthe groove with a shape of an inverted frustum of a cone or an invertedfrustum of a prism. Most of the light incident from the outside (anupper part) passes through transparent dispersion and other structurallayers, and the incident light is not reflected, so that electrophoreticunits can realize local transparency, and a plurality of electrophoreticunits form a local transparent region.

In an exemplary embodiment, when the dyed conductive particles are blackparticles, it can be realized that the electrophoretic unit has twostates of display and transparency. In an exemplary embodiment, threeelectrophoretic units may be arranged to form one pixel, and colorparticles, such as red (R) particles, green (G) particles and blue (B)particles, are respectively arranged in the three electrophoretic units,and distribution densities of the color particles in the threeelectrophoretic units vary according to the voltage applied to thesecond anode 401 to realize corresponding color display.

According to the exemplary embodiment of the present disclosure, thefirst display region and the second display region are synchronouslyprepared on a shared substrate, OLED display and EPD display are wellintegrated on one display substrate, OLED in the first display region istaken as main display, EPD in the second display region is taken asauxiliary display, and the characteristic that the electrophoretic unitscan be switched between the display state and the transparent state isutilized, so that not only a full screen is realized, but also thenormal work of hardware such as a camera can be ensured. When theelectrophoretic units are switched to the display state, theelectrophoretic units and the emitting units provide image displaytogether to realize a truly full screen. When the electrophoretic unitsare switched to the transparent state, the transparent region formed bythe electrophoretic units can provide a working window for hardware suchas a camera and ensure the normal work of the hardware such as thecamera. In an exemplary embodiment, the second display region isequivalent to an opening region, and hardware such as a camera and anoptical sensor is arranged under the second display region. Whenhardware such as the camera does not work, the second display regionrealizes image display, and when hardware such as the camera works, thesecond display region realizes local transparency. Compared with theexisting art, in an exemplary embodiment of the present disclosure, theopening region is arranged as electrophoretic units, and when theelectrophoretic units are switched to the display state, images can bedisplayed in the opening region, thus truly realizing full screendisplay; and when the electrophoretic units are switched to thetransparent state, the normal working of hardware such as a camera isnot affected, realizing truly full screen display.

For a solution of opening a mounting hole in the display region of anOLED display screen, one of the difficulties lies in effectiveness ofencapsulation. As side walls of the mounting hole expose the organicemitting layer and the cathode, water and oxygen in the atmosphere caninvade an active display region along the organic emitting layer, sothat the organic emitting layer in the active display region fails,resulting in defects in display. According to the exemplary embodimentof the present disclosure, the electrophoretic units are arranged, andthe encapsulation layer encapsulates the emitting units and theelectrophoretic units together, so that not only the design difficultyand the manufacturing cost are reduced, but also a transmission path ofwater and oxygen for invading the organic emitting layer is eliminated,the encapsulation effect is improved, and the effectiveness andreliability of encapsulation are ensured.

According to the exemplary embodiment of the present disclosure, OLEDdisplay and EPD display are synchronously prepared on the substratethrough the same preparation process, so that the display theintegration level is high and the structure of the display substrate issimplified, beneficial to the thinning, the process improvement issmall, the process compatibility is good, the process realizability ishigh, and the practicability is strong.

The structure and preparation process of the display substrate shown inan exemplary embodiment of the present disclosure are merelyillustrative. In some possible embodiments, according to actual needscorresponding structures may be changed and patterning processes may beadded or reduced. In some possible implementations, the OLED structureof the first display region may be a top emission structure or a bottomemission structure. In some possible implementations, the thin filmtransistor may be a top gate structure or a bottom gate structure. Insome possible implementations, other electrodes, leads, and structuralfilm layers may be provided in the first driving structure layer, thesecond driving structure layer, the emitting structure layer, and theelectrophoretic display layer. In some possible implementations, asequence of forming the organic emitting material layer and forming theelectrophoretic display material layer may be changed, etc., and thepresent disclosure is not limited herein.

In an exemplary embodiment, another method may be used to form theorganic emitting layer and the electrophoretic display layer, includingthe following operation acts.

(8) Forming a Pattern of a First Pixel Define Layer

In an exemplary embodiment, the first pixel define layer 302 in thefirst display region defines an opening region KA1 exposing the firstanode 301, and the first pixel define layer 302 in the second displayregion covers the second anode 401, as shown in FIG. 17.

(9) Forming a Pattern of an Organic Emitting Material Layer

In an exemplary embodiment, forming the pattern of the organic emittingmaterial layer may include the following acts: the pattern of theorganic emitting material layer 303 is formed in each opening region KA1formed in the first display region by evaporation or ink-jet printing,and the organic emitting material layer 303 is connected with the firstanode 301, as shown in FIG. 18.

(10) Pasting an Electrophoretic Display Layer

In an exemplary embodiment, pasting the electrophoretic display layermay include the following acts: the electrophoretic display layerpre-prepared is pasted on the second display region, as shown in FIG.19. In an exemplary embodiment, the electrophoretic display layerpre-prepared may include a second pixel define layer 402 formed with agroove, the depth of which is smaller than the thickness of the secondpixel define layer 402, and an electrophoretic display material layer403 arranged within the groove.

The present disclosure further provides a preparation method of thedisplay substrate to prepare the display substrate. The displaysubstrate includes a first display region and a second display regionwithin the first display region. In an exemplary embodiment, thepreparation method may include: forming a plurality of emitting units inthe first display region, and forming a plurality of electrophoreticunits in the second display region, wherein the plurality of emittingunits are configured to realize display, and the plurality ofelectrophoretic units are configured to realize switch between a displaystate and a transparent state.

In an exemplary embodiment, forming the plurality of emitting units inthe first display region and forming the plurality of electrophoreticunits in the second display region may include: forming synchronouslyfirst driving structure layers and second driving structure layers on asubstrate; and forming synchronously emitting structure layers andelectrophoretic structure layers.

Each emitting structure layer is formed on each first driving structurelayer, and the each first driving structure layer and the each emittingstructure layer form an emitting unit realizing display; and eachelectrophoretic structure layer is formed on each second drivingstructure layer, and the each second driving structure layer and theeach electrophoretic structure layer form an electrophoretic unitrealizing switching between the display state and the transparent state.

In an exemplary embodiment, forming synchronously the first drivingstructure layers and the second driving structure layers on thesubstrate may include: forming first active layers and second activelayers on the substrate, wherein the first active layers are in thefirst display region and the second active layers are in the seconddisplay region; forming a first insulating layer, and forming first gateelectrodes and second gate electrodes on the first insulating layer,wherein the first gate electrodes are in the first display region andthe second gate electrodes are in the second display region; forming asecond insulating layer and a third insulating layer, wherein first viasexposing each first active layer and each second active layerrespectively and second vias exposing each first gate electrode and eachsecond gate electrode respectively are formed on the third insulatinglayer; forming first source electrodes, first drain electrodes, firstconnection electrodes, second source electrodes, second drain electrodesand second connection electrodes on the third insulating layer, whereineach first source electrode and each first drain electrode arerespectively connected with a first active layer through first vias,each first connection electrode is connected with a first gate electrodethrough a second via, each second source electrode and each second drainelectrode are respectively connected with a second active layer throughfirst vias, and each second connection electrode is connected with eachsecond gate electrode through a second via; and forming a fourthinsulating layer, wherein third vias exposing the first drain electrodesand the second drain electrodes respectively are formed on the fourthinsulating layer.

In an exemplary embodiment, forming synchronously the emitting structurelayers and the electrophoretic structure layers may include: formingfirst anodes and second anodes on the fourth insulating layer, whereineach first anode and each second anode are respectively connected with afirst drain electrode and a second drain electrode through third vias;forming organic emitting layers in the first display region, and formingelectrophoretic display layers in the second display region; and formingfirst cathodes and second cathodes, wherein the first cathodes are inthe first display region and the second cathodes are in the seconddisplay region.

In an exemplary embodiment, forming the organic emitting layers in thefirst display region, and forming the electrophoretic display layers inthe second display region may include: forming first pixel define layersand second pixel define layers, wherein the first pixel define layersare in the first display region, opening regions exposing the firstanodes are formed on the first pixel define layers, the second pixeldefine layers are in the second display region, and grooves are formedon the second pixel define layers; and forming organic emitting materiallayers within the opening regions; and forming the electrophoreticdisplay material layers within the grooves.

In another exemplary embodiment, forming the organic emitting layers inthe first display region, and forming the electrophoretic display layersin the second display region may include: forming first pixel definelayers in the first display region, wherein opening regions exposing thefirst anodes are formed on the first pixel define layers; formingorganic emitting material layers are formed in the opening regions; andpasting pre-prepared electrophoretic display layers on the seconddisplay region, wherein the electrophoretic display layers includesecond pixel define layers formed with grooves, and electrophoreticdisplay material layers arranged within the grooves.

In an exemplary embodiment, a cross-sectional shape of a groove is aninverted trapezoid shape, and a width of a near end of the groove closeto a second anode is smaller than a width of a remote end of the grooveaway from the second anode.

In an exemplary embodiment, an electrophoretic display material layerincludes a transparent dispersion and dyed conductive particles arrangedin the dispersion.

In an exemplary embodiment, a depth of the groove is less than or equalto a thickness of the second pixel define layer.

According to the exemplary embodiment of the present disclosure, organiclight emitting display and electrophoretic display are well integrated,and the characteristic that the electrophoretic units can be switchedbetween the display state and the transparent state is utilized, so thatnot only a full screen is realized, but also the normal work of hardwaresuch as a camera can be ensured, realizing the truly full screendisplay. According to the exemplary embodiment of the presentdisclosure, OLED display and EPD display are synchronously prepared onthe substrate through the same preparation process, the processimprovement is small, the process compatibility is good, the processrealizability is high, and the practicability is strong.

The present disclosure further provides a display apparatus includingany one of the display substrates in aforementioned embodiments. Thedisplay apparatus may include a front-mounted camera, an optical sensoror other devices, and the arranged positions of the front-mountedcamera, the optical sensor and other devices correspond to the seconddisplay region of the display substrate, i.e., are arranged under thesecond display region, so that the switching between transparency anddisplay can be realized in a region corresponding to the camera. Duringnormal display, the electrophoretic units in the second display regionare switched to the display state, and provide image display togetherwith the emitting units in the first display region, realizing a trulyfull screen. When the display apparatus is used for self-photographingor the front-mounted optical sensor of the display apparatus is started,the electrophoretic units in the second display region are switched tothe transparent state, so that the front-mounted camera or thefront-mounted optical sensor under the second display region cannormally work. The display apparatus may be any product or componentwith a display function such as a mobile phone, a tablet computer, atelevision, a display, a notebook computer, a digital photo frame, anavigator, etc.

In the description of the present disclosure, it should be understoodthat the azimuth or position relationship indicated by the terms“middle”, “upper”, “lower”, “front”, “rear”, “vertical”, “horizontal”,“top”, “bottom”, “inner”, “outer” and the like is based on the azimuthor position relationship shown in the drawings, which is only for theconvenience of describing the present disclosure and simplifying thedescription, rather than indicating or implying that the apparatus orelement referred to must have the specific orientation, or beconstructed and operated in the specific orientation, and thus cannot beinterpreted as a limitation on the present disclosure.

In the description of the present disclosure, it should be noted that,unless otherwise clearly specified or defined, the term “install”,“connect” or “link” should be broadly interpreted, for example, it maybe fixed connection, detachable connection, or integral connection; itmay be a mechanical connection or an electrical connection; and it maybe direct connection, indirect connection through an intermediary, or aninternal connection between two elements. Those of ordinary skills inthe art can understand the specific meanings of the above terms in thepresent disclosure according to specific situations.

Although the embodiments disclosed in the present disclosure are as theabove, the contents are only embodiments for facilitating understandingthe present application and are not used to limit the presentdisclosure. Any person skilled in the art to which the presentdisclosure pertains can make any modifications and variations in theform and details of implementation without departing from the spirit andscope of the present disclosure. Nevertheless, the scope of patentprotection of the present application shall still be determined by thescope as defined in the appended claims.

What we claim is:
 1. A display substrate, comprising a first displayregion and a second display region within the first display region,wherein the first display region comprises a plurality of emittingunits, the second display region comprises a plurality ofelectrophoretic units, the plurality of emitting units are configured torealize display, and the plurality of electrophoretic units areconfigured to realize switch between a display state and a transparentstate.
 2. The display substrate according to claim 1, wherein each ofthe plurality of emitting units comprises a first driving structurelayer and an emitting structure layer which are stacked on a substrate,and each of the plurality of electrophoretic units comprises a seconddriving structure layer and an electrophoretic structure layer which arestacked on the substrate.
 3. The display substrate according to claim 2,wherein the first driving structure layer comprises a plurality of firstthin film transistors, each of the plurality of first thin filmtransistors comprises a first active layer, a first gate electrode, afirst source electrode and a first drain electrode; the second drivingstructure layer comprises a plurality of second thin film transistors,each of the plurality of second thin film transistors comprises a secondactive layer, a second gate electrode, a second source electrode, and asecond drain electrode; the first active layer and the second activelayer are arranged on a same layer; the first gate electrode and thesecond gate electrode are arranged on a same layer; and the first sourceelectrode, the first drain electrode, the second source electrode andthe second drain electrode are arranged on a same layer.
 4. The displaysubstrate according to claim 2, wherein the emitting structure layercomprises a first anode, an organic emitting layer, and a first cathode;the electrophoretic structure layer comprises a second anode, anelectrophoretic display layer and a second cathode; the first anode andthe second anode are arranged on a same layer; and the first cathode andthe second cathode are arranged on a same layer.
 5. The displaysubstrate according to claim 4, wherein the organic emitting layercomprises a first pixel define layer provided with an opening region,and an organic emitting material layer arranged within the openingregion; and the electrophoretic display layer comprises a second pixeldefine layer provided with a groove, and an electrophoretic displaymaterial layer arranged within the groove.
 6. The display substrateaccording to claim 5, wherein the electrophoretic display material layercomprises a transparent dispersion and dyed conductive particlesarranged in the dispersion.
 7. The display substrate according to claim5, wherein the first pixel define layer and the second pixel definelayer are arranged on a same layer.
 8. The display substrate accordingto claim 5, wherein a cross-sectional shape of the groove is an invertedtrapezoid shape, and a width of a near end of the groove close to thesecond anode is smaller than a width of a remote end of the groove awayfrom the second anode.
 9. The display substrate according to claim 5,wherein a depth of the groove is less than or equal to a thickness ofthe second pixel define layer.
 10. A display apparatus, comprising thedisplay substrate according to claim
 1. 11. A preparation method of adisplay substrate, the display substrate comprising a first displayregion and a second display region within the first display region, andthe preparation method comprising: forming a plurality of emitting unitsin the first display region, and forming a plurality of electrophoreticunits in the second display region, wherein the plurality of emittingunits are configured to realize display, and the plurality ofelectrophoretic units are configured to realize switch between a displaystate and a transparent state.
 12. The preparation method of the displaysubstrate according to claim 11, wherein forming the plurality ofemitting units in the first display region and forming the plurality ofelectrophoretic units in the second display region comprises: formingsynchronously first driving structure layers and second drivingstructure layers on a substrate; and forming synchronously emittingstructure layers and electrophoretic structure layers; wherein eachemitting structure layer is formed on each first driving structurelayer, and the each first driving structure layer and the each emittingstructure layer form an emitting unit realizing display; and eachelectrophoretic structure layer is formed on each second drivingstructure layer, and the each second driving structure layer and theeach electrophoretic structure layer form an electrophoretic unitrealizing switching between the display state and the transparent state.13. The preparation method of the display substrate according to claim12, wherein forming synchronously the first driving structure layers andthe second driving structure layers on the substrate comprises: formingfirst active layers and second active layers on the substrate, whereinthe first active layers are in the first display region and the secondactive layers are in the second display region; forming a firstinsulating layer, and forming first gate electrodes and second gateelectrodes on the first insulating layer, wherein the first gateelectrodes are in the first display region and the second gateelectrodes are in the second display region; forming a second insulatinglayer and a third insulating layer, wherein first vias exposing eachfirst active layer and each second active layer respectively and secondvias exposing each first gate electrode and each second gate electroderespectively are formed on the third insulating layer; forming firstsource electrodes, first drain electrodes, first connection electrodes,second source electrodes, second drain electrodes and second connectionelectrodes on the third insulating layer, wherein each first sourceelectrode and each first drain electrode are respectively connected witha first active layer through first vias, each first connection electrodeis connected with a first gate electrode through a second via, eachsecond source electrode and each second drain electrode are respectivelyconnected with a second active layer through first vias, and each secondconnection electrode is connected with each second gate electrodethrough a second via; and forming a fourth insulating layer, whereinthird vias exposing the first drain electrodes and the second drainelectrodes respectively are formed on the fourth insulating layer. 14.The preparation method of the display substrate according to claim 13,wherein forming synchronously the emitting structure layers and theelectrophoretic structure layers comprises: forming first anodes andsecond anodes on the fourth insulating layer, wherein each first anodeand each second anode are respectively connected with a first drainelectrode and a second drain electrode through third vias; formingorganic emitting layers in the first display region, and formingelectrophoretic display layers in the second display region; and formingfirst cathodes and second cathodes, wherein the first cathodes are inthe first display region and the second cathodes are in the seconddisplay region.
 15. The preparation method of the display substrateaccording to claim 14, wherein forming the organic emitting layers inthe first display region, and forming the electrophoretic display layersin the second display region comprises: forming first pixel definelayers and second pixel define layers, wherein the first pixel definelayers are in the first display region, opening regions exposing thefirst anodes are formed on the first pixel define layers, the secondpixel define layers are in the second display region, and grooves areformed on the second pixel define layers; and forming organic emittingmaterial layers within the opening regions, and forming theelectrophoretic display material layers within the grooves.
 16. Thepreparation method of the display substrate according to claim 15,wherein a depth of each groove is less than or equal to a thickness ofeach second pixel define layer.
 17. The preparation method of thedisplay substrate according to claim 15, wherein a cross-sectional shapeof each groove is an inverted trapezoid shape, and a width of a near endof the groove close to a second anode is smaller than a width of aremote end of the groove away from the second anode; and eachelectrophoretic display material layer comprises a transparentdispersion and dyed conductive particles arranged in the dispersion. 18.The preparation method of the display substrate according to claim 14,wherein forming the organic emitting layers in the first display region,and forming the electrophoretic display layers in the second displayregion comprises: forming first pixel define layers in the first displayregion, wherein opening regions exposing the first anodes are formed onthe first pixel define layers; forming organic emitting material layersin the opening regions; and pasting pre-prepared electrophoretic displaylayers on the second display region, wherein the electrophoretic displaylayers comprise second pixel define layers formed with grooves, andelectrophoretic display material layers arranged within the grooves. 19.The preparation method of the display substrate according to claim 18,wherein a depth of each groove is less than or equal to a thickness ofeach second pixel define layer.
 20. The preparation method of thedisplay substrate according to claim 18, wherein a cross-sectional shapeof each groove is an inverted trapezoid shape, and a width of a near endof the groove close to a second anode is smaller than a width of aremote end of the groove away from the second anode; and eachelectrophoretic display material layer comprises a transparentdispersion and dyed conductive particles arranged in the dispersion.